Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing

摘要

Within a Czochralski method for fabricating a silicon substrate wafer which employs pulling a silicon monocrystal ingot from a silicon melt and slicing therefrom the silicon substrate wafer, at least one of: (1) the silicon melt has introduced therein a halogen getter material from an extrinsic source; and (2) the silicon substrate wafer is further treated with a plasma. In accord with the method, the silicon substrate wafer is provided with attenuated defects.