| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive-type resist material, particularly a chemically-amplified, positive-type resist material, having a high resolution, margin of exposure, a small difference between sparse and dense dimensions, and process adaptability, surpassing those of conventional positive-type resist materials, furnishing a good pattern shape on exposure, and showing excellent etching resistance. <P>SOLUTION: A polymer compound having at least a repeating unit for copolymerization represented by general formula (1), and having a weight-average molecular weight of 1,000-500,000 is formulated as a base resin into the positive-type resist material. <P>COPYRIGHT: (C)2004,JPO |
