| 摘要 |
PROBLEM TO BE SOLVED: To precisely and comparatively easily carry out a method for the end point detection of plasma etching. SOLUTION: The method advances etching of a film to be etched by positioning a substrate (S) having laminated structure in which the film to be etched (F) is formed on a base layer (Z) in a space between a first electrode and a second electrode, and introducing etching gas into the space and generating a plasma. In this case, on at least one side of the first electrode and the second electrode, a matching box is provided to perform phase and impedance matching. Then, the method monitors the ratio of a reflected light or reflected light intensity, and detects the end point of plasma etching to the film to be etched on condition that the ratio or the intensity is increased or reduced more than a prescribed threshold. COPYRIGHT: (C)2004,JPO
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