发明名称 |
Process for forming low K silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant |
摘要 |
A process for forming low k silicon oxide dielectric material having a dielectric constant no greater than 3.0, while suppressing pressure spikes during the formation of the low k silicon oxide dielectric material comprises reacting an organo-silane and hydrogen peroxide in a reactor chamber containing a silicon substrate while maintaining an electrical bias on the substrate. In a preferred embodiment the reactants are flowed into the reactor at a reactant flow ratio of organo-silane reactant to hydrogen peroxide reactant of not more than 10.6 sccm of organo-silane reactant per 0.1 grams/minute of hydrogen peroxide reactant; and the substrate is biased with either a positive DC bias potential, with respect to the grounded reactor chamber walls, of about +50 to +300 volts, or a low frequency AC bias potential ranging from a minimum of +50/-50 volts up to a maximum of about +300/-300 volts. |
申请公布号 |
EP1100121(A3) |
申请公布日期 |
2004.04.14 |
申请号 |
EP20000124410 |
申请日期 |
2000.11.08 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
SUKHAREV, VALERIY;HSIA, WEI-JEN |
分类号 |
C23C16/40;H01L21/312;H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
C23C16/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|