MIS TYPE TRANSISTOR ELEMENT USING VOLATILE RAW MATERIAL AND SEMICONDUCTOR DEVICE HAVING IT

摘要

PROBLEM TO BE SOLVED: To provide a volatile raw material for an MIS type semiconductor element which is fixed-charge free, can be supplied stably to a gate insulation film for ensuring the capacitance of a fined gate transistor by restraining a leak current and can restrain impurities in a formed film. SOLUTION: In the MIS (Metal Insulator Semiconductor) type transistor element, a silicon single crystalline substrate is used for its base material. A gate insulation film of a semiconductor element is formed of the volatile raw material expressed by Hf(NO3)4×L (wherein L is molecular base) by a chemical vapor-phase growth method or an atomic layer control growth method. COPYRIGHT: (C)2004,JPO