| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, whose switching loss is small and endurance strength at the occurrence of avalanche yield is large. SOLUTION: A sidewall 86, consisting of a silicon nitride film and the like is formed at the side surface of a gate electrode 77. A drain region is constituted of an N-type drift region 75, i.e. an LDD, and an N<SP>+</SP>-type drain region 78, i.e. a contact region. The N-type drift region 75 is formed by injecting an N-type impurity by allowing the gate electrode 77 and the sidewall 86, to serve as masks. Thus, the area where the drain region and the the gate electrode 77 face with each other is reduced, which reduces the drain/gate capacity and enhances the switching speed, whereby switching loss is reduced. COPYRIGHT: (C)2004,JPO
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