发明名称 High efficient pn junction solar cell
摘要 A pn junction solar cell includes a pn junction structure including a p-type and a n-type semiconducting layer, a front contact electrode formed on the front surface of the pn junction structure through a contact pattern having a constant width, and a rear contact electrode formed on a rear surface of the pn structure. The front contact electrode is reduced in its width as it goes away from a terminal.
申请公布号 US6696739(B2) 申请公布日期 2004.02.24
申请号 US20010029977 申请日期 2001.12.31
申请人 SAMSUNG SDI CO., LTD. 发明人 LEE EUN-JOO;KIM DONG-SEOP;LEE SOO-HONG
分类号 H01L31/04;H01L21/00;H01L31/00;H01L31/0224;H01L31/068;(IPC1-7):H01L21/00 主分类号 H01L31/04
代理机构 代理人
主权项
地址