SEMICONDUCTOR DEVICE WITH GATE SPACER OF POSITIVE SLOPE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a semiconductor device with a gate spacer of a positive slope is provided to prevent a bridge from being generated by residual polysilicon by forming a positive slope in a gate spacer while using a wet etch difference of a spacer insulation layer. CONSTITUTION: A plurality of gates are formed on a semiconductor substrate. A gate spacer is formed so as to have a positive slope at the edge of the gate. A polysilicon layer(240) is formed on the substrate to fill a gap between the gates. A part of the polysilicon layer is etched to form an opening exposing the substrate. An interlayer dielectric(260) is formed on the exposed substrate so as to fill the opening.