发明名称 |
System and method to reduce noise in a substrate |
摘要 |
<p>A system and method for reducing noise in a substrate of a chip is provided. The system may include a substrate (70) doped with a first dopant. A first well (80) may be disposed on the substrate and doped with a second dopant. A second well (120) may be disposed within the first well (80) and doped with the second kind of dopant. A first transistor (100) may include one or more first transistor components disposed in the second well (120). The first transistor (100) may be adapted to employ a first type of channel having a quiet voltage source (140) connected to a body thereof. A third well (110) may be disposed within the first well (80) and doped with the first kind of dopant. A second transistor (90) may include one or more second transistor components that may be disposed in the third well (110). The second transistor (90)may be adapted to employ a second type of channel. The first well (80) may shield the substrate (70) from noise in the second well (120) and third well (110). <IMAGE></p> |
申请公布号 |
EP1388895(A2) |
申请公布日期 |
2004.02.11 |
申请号 |
EP20030018063 |
申请日期 |
2003.08.07 |
申请人 |
BROADCOM CORPORATION |
发明人 |
FUJIMORI, ICHIRO |
分类号 |
H01L21/00;H01L21/22;H01L21/76;H01L21/761;H01L21/8238;H01L27/092;H01L29/167;(IPC1-7):H01L27/02 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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