| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate that can be improved in heat radiating property, and to provide a method of manufacturing the substrate. SOLUTION: The semiconductor substrate has a silicon substrate 10, a silicon-germanium layer 12 formed on the substrate 10, and a silicon layer 14 formed on the layer 12. At least either of an isotopic composition ratio of an Si isotope and that of a Ge isotope in at least one of the silicon substrate, silicon-germanium layer, and silicon layer is adjusted to≥95%. Since at least either of the isotopic composition ratio of the Si isotope and Ge isotope is set higher in at least one of the silicon substrate, silicon-germanium layer, and silicon layer, the dissipation of heat can be accelerated in a horizontal direction with respect to the surface of the substrate 10. Therefore, the semiconductor substrate can be improved in heat radiating property. COPYRIGHT: (C)2004,JPO
|
