发明名称 |
REDUCED VOLUME, HIGH CONDUCTANCE PROCESS CHAMBER |
摘要 |
A vacuum processing apparatus including a process chamber having a plurality of pumping ports, and a plurality of pumping cells each connected to a respective pumping port of the plurality of pumping ports. The plurality of pumping ports is preferably located on a lower wall of the process chamber adjacent to a process chamber volume. A process chamber is also provided that includes a lower wall and a side wall, where the side wall has a height of about four inches. The vacuum processing apparatus further includes a chamber liner configured to displace open volume within the process chamber. |
申请公布号 |
WO2004012229(A2) |
申请公布日期 |
2004.02.05 |
申请号 |
WO2003US19884 |
申请日期 |
2003.07.30 |
申请人 |
TOKYO ELECTRON LIMITED;FINK, STEVEN, T. |
发明人 |
FINK, STEVEN, T. |
分类号 |
C23C14/56;C23C16/44;H01J37/32;H01L21/00 |
主分类号 |
C23C14/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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