发明名称 REDUCED VOLUME, HIGH CONDUCTANCE PROCESS CHAMBER
摘要 A vacuum processing apparatus including a process chamber having a plurality of pumping ports, and a plurality of pumping cells each connected to a respective pumping port of the plurality of pumping ports. The plurality of pumping ports is preferably located on a lower wall of the process chamber adjacent to a process chamber volume. A process chamber is also provided that includes a lower wall and a side wall, where the side wall has a height of about four inches. The vacuum processing apparatus further includes a chamber liner configured to displace open volume within the process chamber.
申请公布号 WO2004012229(A2) 申请公布日期 2004.02.05
申请号 WO2003US19884 申请日期 2003.07.30
申请人 TOKYO ELECTRON LIMITED;FINK, STEVEN, T. 发明人 FINK, STEVEN, T.
分类号 C23C14/56;C23C16/44;H01J37/32;H01L21/00 主分类号 C23C14/56
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