| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of controlling the stray light generated under the exposure step of a photolithography process. CONSTITUTION: An exposure volume control transmission layer(132) is deposited at the predetermined portion of an exposure mask(100). The resultant mask is used when the exposure step of a photolithography process is carried out. Preferably, the predetermined portion of the exposure mask is one selected from a group consisting of a peripheral region forming portion(104), a core region forming portion, and a cutting line forming portion. Preferably, the exposure volume control transmission layer is made of one selected from a group consisting of MoSiON, MoSix, and CrON. Preferably, the exposure volume control transmission layer has a thickness of 500-5000 angstrom.
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