METHOD FOR MANUFACTURING PHASE SHIFT MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a phase shift mask of a semiconductor device is provided to be capable of increasing the contrast between a phase shift region and a phase non-shift region. CONSTITUTION: A phase shift layer and a translucent layer are formed at the upper portion of a transparent substrate(11). A photoresist pattern(17) is formed at the upper portion of the resultant structure. A translucent pattern(16) and a phase shift pattern(14) are sequentially formed by selectively etching the resultant structure using the photoresist pattern as an etching mask. An under-cut portion is formed at the lateral portion of the translucent pattern by carrying out an etching process. Then, the photoresist pattern is removed.