| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the epitaxial growth of an n-type polycrystalline silicon film connecting the storage node electrode of a trench capacitor to the n-type source/drain diffusion layer of an MOS (metal oxide semiconductor) transistor. <P>SOLUTION: At the time of connecting an n-type polycrystalline silicon film(storage node electrode) 12 through an n-type polycrystalline silicon film 15 to an n-type source/drain diffusion layer 23 of an MOS transistor, a WSiN layer 14 is interposed between the n-type polycrystalline silicon film 15 and the n-type source/drain diffusion layer 23. <P>COPYRIGHT: (C)2004,JPO |
