发明名称 WORD LINE DRIVING CIRCUIT
摘要 PURPOSE: A word line driving circuit is provided to suppress current increase in a precharge state by replacing a main word line driver signal with a redundant main word line driver signal and by floating a corresponding main word driver signal when there is a connection with an adjacent power supply line. CONSTITUTION: According to the word line driving circuit comprising a main word line driving circuit generating a word line driving signal(HBMWB) and a control circuit generating a control signal to control it, the main word line driving circuit includes a pull-up transistor, a pull-down transistor connected directly, and a control unit. The control unit enables the word line driving signal into a low state by turning off the pull-up transistor and turning on the pull-down transistor when an active command is inputted, and precharges the word line driving signal into a high state by turning on the pull-up transistor and turning on the pull-down transistor for a constant time when a precharge command is inputted and then turns off the pull-up transistor and the pull-down transistor after precharge and thus makes the word line driving signal be in a floating state.
申请公布号 KR20040004813(A) 申请公布日期 2004.01.16
申请号 KR20020038859 申请日期 2002.07.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, HONG SEOK
分类号 H03K19/0175;G11C8/08;G11C11/407;(IPC1-7):G11C8/08 主分类号 H03K19/0175
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