发明名称 |
Polysilicon thin film transistor used in a liquid crystal display and the fabricating method |
摘要 |
A thin film transistor includes a substrate having an upper side; a plurality of parallel-connected active layers supported on the upper side of the substrate; spaces defined between the substrate and the active layers; a first insulating layer on the plurality of active layers; a gate electrode on the first insulating layer over the plurality of active layers; and source and drain electrodes contacting the plurality of the active layers. The active layers of the thin film transistor are laser annealled to polycrystalline silicon. The spaces result in large polysilicon grains that result in good electrical characteristics.
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申请公布号 |
US2004004222(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20030612945 |
申请日期 |
2003.07.07 |
申请人 |
AHN BYUNG-CHUL |
发明人 |
AHN BYUNG-CHUL |
分类号 |
H01L21/336;H01L27/12;H01L29/417;H01L29/786;(IPC1-7):H01L29/04;H01L31/036 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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