| 摘要 |
The invention provides a first gate-line breakage inspection process in which a signal for switching on each thin-film transistor is supplied to each gate of a first left-side transistor sequence, and a current value of a current flowing through two gate lines conducted by each thin-film transistor is measured. In a second gate-line breakage inspection process, a signal for switching on each thin-film transistor is supplied to each gate of a second left-side transistor sequence, and a current value of a current flowing through two gate lines conducted by each thin-film transistor is measured. Subsequently, it is determined whether any gate line is defective based on the inspection results of the first gate-line breakage inspection process and the second gate-line breakage inspection process.
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