发明名称 Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
摘要 One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
申请公布号 US2003232495(A1) 申请公布日期 2003.12.18
申请号 US20030428374 申请日期 2003.05.01
申请人 发明人 MOGHADAM FARHAD;ZHAO JUN;WEIDMAN TIMOTHY;ROBERTS RICK J.;XIA LI-QUN;DEMOS ALEXANDROS T.
分类号 B05D3/06;B05D7/24;C23C16/26;C23C16/40;C23C16/56;H01L21/3105;H01L21/312;(IPC1-7):H01L21/476;H01L21/31;H01L21/469 主分类号 B05D3/06
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