发明名称 |
Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
摘要 |
One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
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申请公布号 |
US2003232495(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20030428374 |
申请日期 |
2003.05.01 |
申请人 |
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发明人 |
MOGHADAM FARHAD;ZHAO JUN;WEIDMAN TIMOTHY;ROBERTS RICK J.;XIA LI-QUN;DEMOS ALEXANDROS T. |
分类号 |
B05D3/06;B05D7/24;C23C16/26;C23C16/40;C23C16/56;H01L21/3105;H01L21/312;(IPC1-7):H01L21/476;H01L21/31;H01L21/469 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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