Chemical vapor deposition (CVD) method and calibration apparatus providing enhanced uniformity

摘要

Within a chemical vapor deposition (CVD) method for forming a microelectronic layer there is provided a source material dispensing nozzle employed within a chemical vapor deposition (CVD) apparatus which is employed within the chemical vapor deposition (CVD) method for forming the chemical vapor deposition (CVD) deposited microelectronic layer upon a substrate positioned within the chemical vapor deposition (CVD) apparatus. There is then calibrated the source material dispensing nozzle to provide a calibrated source material dispensing nozzle. There is then employed the calibrated source material dispensing nozzle within the chemical vapor deposition (CVD) apparatus while employing the chemical vapor deposition (CVD) method for forming the chemical vapor deposition (CVD) deposited microelectronic layer upon the substrate positioned within the chemical vapor deposition (CVD) apparatus. The chemical vapor deposition (CVD) method also contemplates a calibration and alignment apparatus employed for calibrating the chemical vapor deposition (CVD) dispensing nozzle.