| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a crack in a semiconductor layer when growing the semiconductor layer on a substrate. <P>SOLUTION: A primary coat 11 having an opening 11a is selectively formed on the principal surface of a substrate 10 composed of sapphire. Then, KrF excimer laser is irradiated onto the primary coat 11 from the surface opposite to the substrate 10's primary coat, thus creating a heat decomposition layer 11b between the primary coat 11 and the substrate 10, which is the lower part of the primary coat 11 pyrolytically decomposed by the laser beam. After that, a semiconductor 12 is selectively grown in a horizontal direction while using the primary coat 11 as a seed crystal with the heat decomposition layer 11b between the substrate 10 and the primary coat 11. <P>COPYRIGHT: (C)2004,JPO |
