发明名称 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the deterioration of performance in a photoelectric conversion element, such as a photodiode or the like, by controlling dark current in a situation of no light irradiation and by increasing on/off ratio of optical current. <P>SOLUTION: The photoelectric conversion element comprises function layers using an organic material that are sandwiched between a transparent board that is attached with an optically transparent electrode film and serves as an anode and a metallic electrode film that serves as a cathode. The function layers comprise a titan oxide thin film 3 as an n-type semiconductor layer, and a friction transferring film (organic semiconductor layer) 4 of PPV as a p-type semiconductor layer which is pressure bonded and swept on the surface of the titan oxide film. The metallic electrode comprises a foil 6 made of polyvinylidene chloride with gold evaporated thereon (metallic electrode film 5), which is stuck to contact the PPV and used as an electrode. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003347568(A) 申请公布日期 2003.12.05
申请号 JP20020149916 申请日期 2002.05.24
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 TANIGAKI NOBUTAKA;YATSUSE KIYOSHI
分类号 H01L51/42;H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L51/42
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