| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a flash memory element wherein electrical characteristics of a common source line can be maintained uniformly, productivity and an yield can be improved by simplifying processes, and a cell size can be reduced. SOLUTION: This method contains a step for forming a large number of oxide film line patterns 58P and a large number of isolating cell isolation films 58T on a semiconductor substrate 50, a step for forming a tunnel oxide film 60 in an exposed part of the semiconductor substrate, a step for forming a floating gate 62G, a dielectrics film 64, a control gate 66G and a hard mask layer 68, a step for exposing the semiconductor substrate by eliminating exposed parts of the oxide film line patterns 58P in a self alignment source etching process, and a step for forming a large number of drains and a large number of common source lines in a cell source/drain implantation process. COPYRIGHT: (C)2004,JPO
|
