| 摘要 |
<p>A lignt-emitting diode (100) is based on an undoped intrinsic SiC substrate (101) on which are grown: an insulating buffer or nucleation structure (102); a light-emitting structure (112); window layers (107, 108); a semi-transparent conductive layer (119); a bond pad adhesion layer (109); a p-type electrode bond pad (110); and an n-type electrode bond pad (115). In one embodiment, the light-emitting surface (130) of the substrate (101) is roughened to maximize light emission.</p> |
