| 摘要 |
PURPOSE: A semiconductor memory is provided to reduce a total chip size, the loading capacitance of a precharge circuit, and the power consumption by forming the precharge circuit with a word line of a dummy cell. CONSTITUTION: A semiconductor memory includes a memory cell array(11), a process dummy cell(12), a bit line precharge circuit(13a), a bit line equalization circuit(13b), and a sense amplifier(14). The bit line precharge circuit(13a) is formed by using a word line of the process dummy cell(12). The bit line precharge circuit includes a second and a third transistor(N2,N3). The second and the third transistors(N2,N3) are used for receiving a predetermined equalization signals and a predetermined precharge signal through each gate and charging two bit lines to a precharge level through each source and each drain.
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