发明名称 |
Contact structure, phase change memory cell, and manufacturing method thereof with elimination of double contacts |
摘要 |
The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction which is transverse to said first direction. The first and second thin portions are in direct electrical contact and define a contact area having sublithographic extent. The second thin portion is formed in a slit of sublithographic dimensions. According to a first solution, oxide spacer portions are formed in a lithographic opening, delimited by a mold layer. According to a different solution, a sacrificial region is formed on top of a mold layer and is used for forming the sublithographic slit in the mold layer.
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申请公布号 |
US2003214856(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20030372639 |
申请日期 |
2003.02.20 |
申请人 |
STMICROELECTRONICS S. R. I.;OVONYX INC. |
发明人 |
PELLIZZER FABIO;PIROVANO AGOSTINO |
分类号 |
G11C11/56;H01L21/76;H01L27/24;H01L45/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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