| 摘要 |
PROBLEM TO BE SOLVED: To form a deposited film with uniform thickness and quality and few defect on a substrate with a large area at a high processing speed in a process for fabricating a semiconductor device wherein the deposited film is formed on the substrate by plasmanizing a raw material gas by high-frequency power. SOLUTION: As the first step, a first layer is formed on a support employing a predetermined raw material gas flow rate and high-frequency power. As a subsequent step, a second layer is formed employing a raw material gas flow rate and high-frequency power which are different from those employed for forming the first layer. Between the steps for forming the first and second layers, a transition step is inserted wherein the raw material gas flow rate and the high-frequency power are gradually shifted from those employed for forming the first layer to those employed for forming the second layer. In the transition step, the shiftings of the high-frequency power and the raw material gas flow rate are initiated at different timings. COPYRIGHT: (C)2004,JPO
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