Semiconductor memory device and method of producing same

摘要

A semiconductor memory device having a high quality storage node electrode preventing for example connection failure between a contact plug and the storage node electrode, including first insulating films formed on a substrate, storage node contact holes formed in the first insulating films, storage node contact plugs buried in the storage node contact holes, a storage node electrode formed connected to the storage node contact plug, and a second insulating film formed above the first insulating film at a gap of the storage node electrode, the storage node electrode and the storage node contact plug being connected at least at part of the top surface and the side surface of the storage node contact plug or the storage node electrode and the second inter-layer insulating film being in contact at least at part of the top surface and the side surface of the second insulating film, and a method for producing the same.