| 摘要 |
PURPOSE: A thin film transistor and a fabricating method thereof are provided to easily crystallize amorphous silicon to polycrystalline silicon by heating a semiconductor layer by applying voltage to a heating conductive layer formed below the semiconductor layer, thereby simplifying the activation when forming impurity areas to the polycrystalline silicon layer. CONSTITUTION: A thin film transistor includes a heating conductive layer(101) formed of a metal having a predetermined resistance on a substrate(100) for increasing the temperature of the substrate, a buffer layer(102) formed on the conductive layer with silicon oxide film for insulating the conductive layer, a polycrystalline silicon layer(103) formed on the buffer layer, and a gate insulating film and gate electrodes(105) formed on the polycrystalline silicon layer. Impurity areas(103a) are formed on the polycrystalline silicon layer at both sides of the gate electrodes, and an interlayer(106) formed on the entire surface of the substrate with contact holes(110) on the impurity areas. On the interlayer, source and drain electrodes(107a,107b) are formed to be electrically connected to the impurity areas via the contact holes. |
