发明名称 Semiconductor light emitting device and method for producing the same
摘要 A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a <1, 1, -2, 0> direction.
申请公布号 US2003201441(A1) 申请公布日期 2003.10.30
申请号 US20030405791 申请日期 2003.04.02
申请人 NAKAMURA SHINJI;ISHIDA MASAHIRO;YURI MASAAKI;IMAFUJI OSAMU;ORITA KENJI 发明人 NAKAMURA SHINJI;ISHIDA MASAHIRO;YURI MASAAKI;IMAFUJI OSAMU;ORITA KENJI
分类号 H01L33/00;H01S5/223;H01S5/323;(IPC1-7):H01L29/04 主分类号 H01L33/00
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