发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method of the same capable of contriving the contraction of a size and increasing an yield per one sheet of wafer. <P>SOLUTION: Upon manufacturing the semiconductor device, a layer exclusive for pad or the uppermost position layer is formed on a layer for forming a power supply/GND wiring, a memory cell unit and the wiring for a control circuit unit. Only an electrode for connecting to external out going lines or a plurality of pads 11, a plurality of contact holes 12 for making conduction with respective wirings formed on a lower position layer and leading wirings 13 for leading respective pads 11 to predetermined contact holes 12 are formed on the uppermost position layer. On the other hand, a layout with respect to the plurality of pads 11 is made common regardless of the kind of product. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003297922(A) 申请公布日期 2003.10.17
申请号 JP20020099785 申请日期 2002.04.02
申请人 UMC JAPAN 发明人 SHIGETA SHINOBU
分类号 H01L23/52;H01L21/3205;H01L21/82;H01L21/822;H01L23/485;H01L23/50;H01L23/525;H01L27/04;(IPC1-7):H01L21/82;H01L21/320 主分类号 H01L23/52
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