INTERMETAL DIELECTRIC PATTERN AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: An intermetal dielectric pattern and a method for forming the same are provided to be capable of preventing the generation of photoresist residuals and reducing the thickness of a photoresist layer deposited when carrying out a via hole patterning process by using an upper capping layer. CONSTITUTION: After forming a lower metal line(110) at the upper portion of a semiconductor substrate, an intermetal dielectric is formed on the entire surface of the resultant structure by sequentially depositing a lower insulating layer(130) and an upper insulating layer(150). A via hole(180) is formed by patterning the intermetal dielectric for exposing the upper surface of the lower metal line. An upper capping layer(190) is then formed on the entire surface of the resultant structure. A trench line is formed by sequentially patterning the upper capping layer and the upper insulating layer for exposing the upper portion of the via hole.