Formation of at least one deep trench structure comprises forming epitaxial silicon film on at least some portions of sidewalls of deep trench to reduce initial dimensions of deep trenches to targeted dimensions

摘要

Formation of at least one deep trench structure comprises providing at least one deep trench having sidewalls that extend to a common bottom wall in a substrate surface, each of the deep trenches having initial dimensions that are wider than targeted dimensions for the deep trenches; and forming an epitaxial silicon film on at least some portions of the sidewalls to reduce the initial dimensions of the deep trenches to the targeted dimensions.