发明名称 |
MOSFET, semiconductor device using the same and production process therefor |
摘要 |
A MOSFET includes: a first conductivity type a semiconductor substrate having a trench formed in a surface area thereof, a gate electrode formed on the semiconductor substrate; and a trench gate electrode which is adjacent to the gate electrode and is buried in the trench, and which generates an output by AND logic in response to inputs to the gate electrode and the trench gate electrode, wherein an impurity concentration directly below the gate electrode is higher than an impurity concentration directly below the trench gate electrode.
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申请公布号 |
US6621118(B2) |
申请公布日期 |
2003.09.16 |
申请号 |
US20020202080 |
申请日期 |
2002.07.25 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OHARA MASANORI;UEDA NAOKI |
分类号 |
H01L29/43;H01L21/336;H01L21/8234;H01L27/088;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/76 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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