| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of an MONOS-type non-volatile memory device. SOLUTION: The manufacturing method of the non-volatile memory device comprises a process where a gate layer 140a, provided with a stopper layer S100 above the same, is formed on a semiconductor layer, a process where control gates 20, 30 are formed on both side surfaces of the gate layer 140a via an ONO film 22, a process where an insulation layer 70 is formed over the whole surface, a process where the insulation layer 70 is ground so as to expose the stopper layer S100, a process where the upper surface of the gate layer 140a is exposed by removing the stopper layer S100, a process where a conductor layer 50a is formed on the gate layer 140a and the insulation layer, a process where a word line 50 and a word gate 14a are formed through the etching of the conductor layer 50a and the gate layer 140a and a process where a gate layer 14c, remaining by the etching, is removed. COPYRIGHT: (C)2003,JPO
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