PLASMA ETCH PROCESS FOR FABRICATING SEMICONDUCTOR

摘要

PURPOSE: A plasma etch process for fabricating a semiconductor is provided to uniformly distribute electrons in the entire region of a chamber by adding additive gas such as H2, He and Ar having low electronegativity in addition to main etch gas. CONSTITUTION: A pumping process is performed to form a pattern of a predetermined type while a wafer is placed on a lower electrode of a chamber. Etch gas is supplied to the inside of the chamber while the inner pressure maintains a predetermined pressure. When the inner pressure is stabilized, predetermined radio frequency(RF) power is applied to an upper electrode in the chamber to generate plasma. An etch target layer on the wafer is etched by using the generated plasma. The etch gas includes the main etch gas for etching a specific layer and the additive gas of low electronegativity.