| 摘要 |
PURPOSE: A method for fabricating a fine pattern of a semiconductor device is provided to form an ArF photoresist layer pattern that reacts with an ArF wavelength by forming a mask pattern of a tri-level resist structure. CONSTITUTION: After the first photoresist layer(102) is formed on an etch target layer(101), an insulation layer(103) for a hard mask is formed on the first photoresist layer. After an anti-reflective coating(ARC) is formed on the insulation layer for the hard mask, the second photoresist layer pattern for ArF only is selectively formed on the ARC. The ARC and the insulation layer for the hard mask are selectively etched by using the second photoresist layer pattern as a mask while the second photoresist layer pattern is eliminated. The first photoresist layer is selectively etched by using the insulation layer for the hard mask. The etch target layer is selectively etched by using the etched first photoresist layer as a mask. The insulation layer for the hard mask and the first photoresist layer are removed to form a fine pattern.
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