发明名称 Semiconductor device and its manufacturing method
摘要 A wiring circuit block (2) is produced by forming a release layer (6) on one of planarized principal surfaces of a mother substrate (1), forming an insulating layer (7) on the release layer (6), patterning the insulating layer (7) and forming a wiring layer (8) on the patterned insulating layer (7), and separating the insulating layer (7) and wiring layer (8) from the release layer (6) on the mother substrate (1). The circuit block (2) has components (12), (13) and (17) deposited on the wiring layer (8), and is mounted on a base circuit board (3) to provide a wiring device. Also, semiconductor chips (62) are mounted on the circuit block (2), and the circuit block (2) is mounted on a base circuit board (64) to provide a semiconductor device.
申请公布号 US2003162386(A1) 申请公布日期 2003.08.28
申请号 US20030240330 申请日期 2003.03.06
申请人 OGAWA TSUYOSHI;NISHITANI YUJI;OKUBORA AKIHIKO 发明人 OGAWA TSUYOSHI;NISHITANI YUJI;OKUBORA AKIHIKO
分类号 H01L21/48;H05K1/02;H05K1/03;H05K1/09;H05K1/16;H05K1/18;H05K3/00;H05K3/20;H05K3/46;(IPC1-7):H01L51/40;H01L21/301;H01L21/46;H01L21/78;H01L21/476;H01L23/48;H01L23/52;H01L29/40 主分类号 H01L21/48
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