| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a high performance high breakdown voltage charge coupled device stably with ease by preventing charge transfer effect from being deteriorated, and raising dielectric breakdown voltage between gate electrodes. SOLUTION: A first insulating film 13 is formed on a charge transfer region 12 formed on a semiconductor substrate 11, and a plurality of first transfer electrodes 14 are formed at a predetermined interval on the first insulating film 13. After the first transfer electrode 14 is covered with an oxide film 15, a second insulating film 16 is formed on the oxide film 15 and the first insulating film 13. In succession, the second insulating film 16 is subjected to anisotropical etching to form a side wall 16a in contact with the first insulating film 13 on the side of the oxide film 15 covering the first transfer electrode 14, and a second transfer electrode 17 is formed on the first insulating film 13. COPYRIGHT: (C)2003,JPO
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