| 摘要 |
The invention relates to a semiconductor memory cell (1) wherein the trench (12) is open towards the substrate (42) only on one side (50). On the other side (52), the insulation collar (44, 47, 55) extends up to the insulation cover (62), thereby eliminating the need for a shallow trench insulation . The unilaterally buried contact (70) is formed by slantwise implantation, for example with N2 or argon, the implantation proceeding from a defined direction at an angle of inclination between 15 and 40 DEG . The implantation substances effect different etching and oxidation properties etc. of the implanted material. Combined with the aforementioned method, the invention allows for a new design of the semiconductor cell (1) according to which the structures that form the active regions form long lines (31) that extend across several neighboring semiconductor cells, thereby solving in an advantageous manner the problem of strict overlay tolerances between the trenches (12) and the structures (31) that form the active regions. According to the invention, the arrangement of the trenches (12, 13) in a checkered pattern solves the problem of lithographic structure width control of neighboring trenches. |
