| 摘要 |
As the first method, provided is using Tetraethyl Orthosilicate Si(OC2H5)4 at the process temperature of 650° C.±5° C. as film forming material, to decrease crystal defects occurring during deposition. As the second method, provided is annealing in sparse oxygen gas atmosphere after deposition, to mend crystal defects occurred during deposition. As the third method, provided is keeping initial temperature of CVD device in the temperature (about 400° C.) in which natural oxidation of deposition starting surface is prevented and production circumstance of semiconductor element is not deteriorated, then, heating up to CVD temperature (about 750° C. or about 650° C.), to deposit oxide.
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