SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a bit line sense enable-signal can be generated to be immune from process changes, voltage fluctuations temperature fluctuations or the like without increasing layout area. SOLUTION: This device is constituted of a dummy word line selecting circuit 30 having the same constitution substantially as a word line selecting circuit 22 for selecting one word line and selecting a dummy word line having the same line capacitance substantially as one word line responding to an output signal of a decoder, and a Schmitt trigger 50 connected to the same power source voltage substantially as enable-voltage for enabling a word line and generating a word line enable detecting signal by inputting a dummy word line signal. COPYRIGHT: (C)2003,JPO