METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE HAVING TA3N5 LAYER AS DIELECTRIC LAYER

摘要

PURPOSE: A method of manufacturing a capacitor of a semiconductor device having a Ta3N5 layer as dielectric layer is provided to use a Ta3N5 layer that do not require two step process and a high temperature thermal process. CONSTITUTION: A bottom electrode(110) is formed. A dielectric layer(120) consisting of Ta3N5 is formed on the bottom electrode by CVD. An upper electrode(130) is formed on the dielectric layer. A Ta3N5 layer is formed by pulsing a vaporized tantalum precursor and vaporized nitrogen source in a reaction chamber.