发明名称 Substrate processing unit and processing method
摘要 The present invention includes a current plate which is arranged above a substrate in a chamber. A pressure inside the chamber is reduced by exhaust means and drying processing is performed on, for example, a coating solution on the substrate. On a peripheral portion of an underneath surface of the current plate, formed is a ring-shaped protrusion corresponding to a peripheral portion of the substrate. A protruding portion of a coating solution at the peripheral portion of the substrate is made flat by air current generated when the pressure is reduced, and consequently a coating film with a uniform film thickness as a whole is formed on the substrate.
申请公布号 US6599366(B1) 申请公布日期 2003.07.29
申请号 US20000711968 申请日期 2000.11.15
申请人 TOKYO ELECTRON LIMITED 发明人 KITANO TAKAHIRO;KOBAYASHI SHINJI;ESAKI YUKIHIKO;MORIKAWA MASATERU
分类号 H01L21/027;H01L21/00;(IPC1-7):B05C11/06 主分类号 H01L21/027
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