| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in which an internal circuit will not produce errors in operation and will not break down, even if the external potential exceeds the threshold potential in a test mode. SOLUTION: A level detector 12 of a DRAM (dynamic random access memory) resets a flip-flop 27, 28, when the external reference voltage VR2 becomes lower than the threshold potential in the voltage test mode, to produce the internal power-supply potential VCCP according to the external reference potential VR2, and releases the voltage test mode. Therefore, the internal circuit of the DRAM will not produce errors, even if the external reference potential VR2 becomes lower than the threshold potential. COPYRIGHT: (C)2003,JPO
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