| 摘要 |
PURPOSE: A defect recovery circuit for semiconductor device having a bit line is provided to improve a characteristic of leakage current in a defective bit line by maintaining a ground voltage level of the defective bit line. CONSTITUTION: A defect recovery circuit for semiconductor device includes a plurality of fuses(404a,404b), a plurality of control signal generation portions(406a,406b), and a plurality of switch portions(408a,408b,410a,410b). The fuses have the first terminal connected to a power source and the second terminal connected to a source or a drain of a precharge transistor of a bit line. The control signal generation portions generate a high level signal if the fuse is cut off or a low level signal if the fuse is not cut off. The switch portions connect the bit line to the ground when receiving the high level signal.
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