| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a sufficient boron punch- through preventing effect is obtained in a p-channel MOSFET, and sufficient current driving power can be obtained while a tunnel current is reduced in an n-channel MOSFET, and to provide a method for manufacturing the semiconductor device. SOLUTION: In the semiconductor device manufactured by the method for manufacturing the semiconductor device, an n-channel and a p-channel MOSFET transistors including oxide nitride films as gate insulating films are arranged in parallel. Concentrations of nitrogen of the gate insulating films of the n- channel and the p-channel MOSFET transistors are different from each other. COPYRIGHT: (C)2003,JPO
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