| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element of a structure which is excellent in reproducibility concerning production of an element. SOLUTION: In the structure of the semiconductor laser element, an active layer extending along a crystal surface tilted against a principal surface of a substrate is supported between a first conductive semiconductor layer and a second conductive semiconductor layer, and an end surface almost vertical to the crystal surface is made a resonant surface and an emitting area is made a part of an area in a tilted surface of the active layer. As a result, a variation in emission wave length can be controlled. COPYRIGHT: (C)2003,JPO
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