ANTI-OXIDATION PROCESSED WAFER SUSCEPTOR

摘要

PURPOSE: An anti-oxidation processed wafer susceptor is provided to be capable of preventing the surface oxidation of the susceptor made of graphite by using thermally stable SiO2 or polysilicon. CONSTITUTION: A wafer susceptor(110) made of graphite is installed in a reaction chamber for fixedly loading a wafer on the upper portion of the wafer susceptor. An SiO2 or polysilicon layer(120) is coated on the wafer susceptor(110). Preferably, the SiO2 or polysilicon layer is exposed under oxidation gas atmosphere. Preferably, the SiO2 or polysilicon layer is formed by carrying out a CVD(Chemical Vapor Deposition) process. At this time, the oxidation of the susceptor is prevented by blocking the contact between carbon and oxygen using the SiO2 or polysilicon layer.