METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the capability of a cell transistor by reducing the resistance of a bit line plug. CONSTITUTION: A gate electrode(14) is formed on a desired region of a semiconductor substrate(11). After forming a spacer(15) at both sidewalls of the gate electrode, a junction region(16) is formed in the substrate. After forming the first interlayer dielectric(17) on the resultant structure, contact holes are formed to expose the junction region. A bit line plug(18a) and a storage node plug(18b) are formed by filling a polysilicon layer into the contact holes. After forming the second interlayer dielectric(19) on the resultant structure, the bit line plug(18a) is exposed by selectively etching the second interlayer dielectric. Impurity ions are selectively implanted into the exposed bit line plug(18a).