| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of obtaining sufficient capacitance by using MIM(Metal Insulator Metal) capacitor. CONSTITUTION: The first and second trench(202,203) having different size are formed in a semiconductor substrate(200). The first and second via hole(204,205) having same size are formed in the first and second trench, respectively. The first conductive layer, an oxide layer and the second conductive layer are sequentially formed on the resultant structure. A lower metal wiring, a lower electrode(205a), a storage oxide layer(209) and an upper electrode(211) are formed by sequentially etching the second conductive layer, the oxide layer and the first conductive layer to expose the surface of the first and second trench(202,203).
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